Pattern formation material and method

ABSTRACT

In the pattern formation method of this invention, a resist film is formed by applying, on a substrate, a pattern formation material containing a polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2, and an acid generator,  
                 
 
                 
 
     wherein R 1  and R 2  are the same or different and selected from the group consisting of an alkyl group, a chlorine atom and an alkyl group including a chlorine atom; and R 3  is a protecting group released by an acid. Then, the resist film is irradiated with exposing light of a wavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band for pattern exposure, and a resist pattern is formed by developing the resist film after the pattern exposure.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to pattern formation material andmethod. More particularly, it relates to a pattern formation methodemployed for forming a resist pattern, used for forming a semiconductordevice or a semiconductor integrated circuit on a semiconductorsubstrate, by using exposing light of a wavelength of a 1 nm through 30nm band or a 110 nm through 180 nm band, and a pattern formationmaterial used in the same.

[0002] Currently, in fabrication of a mass storage semiconductorintegrated circuit, such as a 64 Mbit dynamic random access memory (RAM)and a logic device or a system LSI with a 0.25 μm through 0.15 μm rule,a resist pattern is formed by using a chemically amplified resistmaterial including a polyhydroxystyrene derivative and an acid generatoras principal constituents with KrF excimer laser (of a wavelength of a248 nm band) used as exposing light.

[0003] Moreover, for fabrication of a 256 Mbit DRAM, a 1 Gbit DRAM or asystem LSI with a 0.15 μm through 0.13 μm rule, a pattern formationmethod using, as exposing light, ArF excimer laser operated at a shorterwavelength (of a 193 nm band) than the KrF excimer laser is now underdevelopment.

[0004] The resist material including a polyhydroxystyrene derivative asa principal constituent has high absorbance against light of awavelength of a 193 nm band because of an aromatic ring includedtherein. Therefore, exposing light of a 193 nm band cannot uniformlyreach the bottom of a resist film, and hence, a pattern cannot be formedin a good shape. Accordingly, the resist material including apolyhydroxystyrene derivative as a principal constituent cannot be usedwhen the ArF excimer laser is used as the exposing light.

[0005] Therefore, a chemically amplified resist material including, as aprincipal constituent, a polyacrylic acid derivative or apolycycloolefin derivative having no aromatic ring is used when the ArFexcimer laser is used as the exposing light.

[0006] On the other hand, as exposing light for a pattern formationmethod capable of coping with high resolution, X rays, an electron beam(EB) and the like are being examined.

[0007] When the X rays are used as the exposing light, however, thereare a large number of problems in the exposure system and preparation ofa mask. Also, when the EB is used as the exposing light, the throughputis disadvantageously low, and hence, the EB is not suitable to massproduction. Thus, neither the X rays nor the EB is preferred as theexposing light.

[0008] Accordingly, in order to form a resist pattern finer than 0.10μm, it is necessary to use exposing light of a wavelength shorter thanthat of the ArF excimer laser, such as Xe₂ laser (of a wavelength of a172 nm band), F₂ laser (of a wavelength of a 157 nm band), Kr₂ laser (ofa wavelength of a 146 nm band), ArKr laser (of a wavelength of 134 nmband), Ar₂ laser (of a wavelength of a 126 nm band) and soft-X rays (ofa wavelength of a 13, 11 or 5 nm band). In other words, a resist patternis required to be formed by using exposing light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band.

[0009] Therefore, the present inventors have formed resist patterns byconducting pattern exposure using F₂ laser (of a wavelength of a 157 nmband) on resist films formed from conventionally known chemicallyamplified resist materials respectively including a polyhydroxystyrenederivative represented by Chemical Formula A, a polyacrylic acidderivative represented by Chemical Formula B and a polycycloolefinderivative represented by Chemical Formula C.

[0010] Now, a pattern formation method using any of the aforementionedconventional chemically amplified resist materials and problems of themethod will be described with reference to FIGS. 2A through 2D.

[0011] First, as is shown in FIG. 2A, the chemically amplified resistmaterial is applied on a semiconductor substrate 1 by spin coating andthe resultant substrate is heated, thereby forming a resist film 2 witha thickness of 0.3 μm. Then, as is shown in FIG. 2B, the resist film 2is subjected to pattern exposure by irradiating with a F₂ laser beam 4through a mask 3. In this manner, an acid is generated from the acidgenerator in an exposed portion 2 a of the resist film 2 but no acid isgenerated in an unexposed portion 2 b of the resist film 2.

[0012] Then, as is shown in FIG. 2C, the semiconductor substrate 1 isheated with a hot plate at, for example, 100° C. for 60 seconds.

[0013] Next, the resist film 2 is developed with an alkaline developer,thereby forming a resist pattern 5.

[0014] However, as is shown in FIG. 2D, the resist pattern 5 has adefective pattern shape, and much scum remains on the semiconductorsubstrate 1. Such problems occur not only in using the F₂ laser as theexposing light but also in using another light of a wavelength of a 1 nmthrough 30 nm band or a 110 nm through 180 nm band.

[0015] Accordingly, a resist pattern cannot be practically formed byirradiating a resist film formed from any of the aforementionedchemically amplified resist materials with light of a wavelength of a 1nm through 30 nm band or a 110 nm through 180 nm band.

SUMMARY OF THE INVENTION

[0016] In consideration of the aforementioned conventional problems, anobject of the invention is forming a resist pattern in a good patternshape with minimally producing scum by using exposing light of awavelength of a 1 nm through 30 nm band or a 110 nm through 180 nm band.

[0017] The present inventors have studied the causes of the conventionalproblems occurring in using the aforementioned conventional chemicallyamplified resist materials, and have found the following:

[0018] First, the conventional chemically amplified resist materialshave high absorbance against light of a wavelength of a 1 nm through 180nm band. For example, a resist film formed from the chemically amplifiedresist material including a polyhydroxystyrene derivative as a principalconstituent and having a thickness of 100 nm has transmittance of 20% atmost against the F₂ laser (of a wavelength of a 157 nm band). Therefore,various examination has been made on means for improving thetransmittance of a chemically amplified resist material against light ofa wavelength of a 1 nm through 180 nm band. As a result, thetransmittance of a chemically amplified resist material against light ofa wavelength of a 1 nm through 180 nm band can be improved byintroducing a unit of a polymer having a cyano group (—C≡N) on its sidechain into a base polymer of the chemically amplified resist material.

[0019] Furthermore, when the aforementioned chemically amplified resistmaterials, particularly the resist material including apolyhydroxystyrene derivative, are irradiated with light of a wavelengthof a 1 nm through 180 nm band, a reaction is caused regardless of thefunction of an acid, so that a hydrogen atom bonded to carbon located atthe α-position of the principal chain of the polymer can be released andthat polymer radicals from which the hydrogen atoms are released canbond to each other to be crosslinked. As a result, the solubility of anexposed portion of the resist film in a developer is degraded.Therefore, means for preventing the crosslinking reaction of theprincipal chains of the polymer of the chemically amplified resistmaterial has been variously studied. As a result, it has been found thatthe crosslinking reaction of the principal chains can be avoided bysubstituting an alkyl group or a chlorine atom for a hydrogen atomlocated at the α-position of the principal chain of the polymer.

[0020] Moreover, when a cyano group is introduced to a side chain of thepolymer, the cyano group interacts with a hydroxyl group based on ahydrogen bond. Therefore, the dry etching resistance and the heatresistance of the resist film can be improved, and an unexposed portionof the resist film can be more effectively prevented from dissolving ina developer, so as to improve the contrast between the exposed portionand the unexposed portion.

[0021] The present invention was devised on the basis of theaforementioned findings, and specifically provides pattern formationmaterials and methods described below.

[0022] The first pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 1 and asecond unit represented by Chemical Formula 2; and an acid generator,

[0023] wherein R₁ and R₂ are the same or different and selected from thegroup consisting of an alkyl group such as a methyl group and an ethylgroup, a chlorine atom and an alkyl group including a chlorine atom suchas CCl₃; and R₃ is a protecting group released by an acid.

[0024] In the first pattern formation material, since the first unit hasa cyano group, the transmittance against light of a wavelength of a 1 nmthrough 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first and second units, a crosslinking reaction is nevercaused in the principal chains, resulting in improving the solubility ofan exposed portion of a resist film in a developer. Furthermore, sincethe first and second units have a benzene ring, the dry etchingresistance can be largely improved.

[0025] The second pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 3, asecond unit represented by Chemical Formula 4 and a third unitrepresented by Chemical Formula 5; and an acid generator,

[0026] wherein R₁, R₂ and R₄ are the same or different and selected fromthe group consisting of an alkyl group such as a methyl group and anethyl group, a chlorine atom and an alkyl group including a chlorineatom such as CCl₃; and R₃ is a protecting group released by an acid.

[0027] In the second pattern formation material, since the first unithas a cyano group, the transmittance against light of a wavelength of a1 nm through 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first, second and third units, a crosslinking reaction isnever caused in the principal chains, resulting in improving thesolubility of an exposed portion of a resist film in a developer.Furthermore, since the first, second and third units have a benzenering, the dry etching resistance can be extremely improved. In addition,since the third unit has a phenyl group, the wettability is improved soas to improve adhesion onto a substrate, and the dissolving rate in analkaline developer can be controlled by adjusting the ratio of the thirdunit in the polymer.

[0028] The third pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 6, asecond unit represented by Chemical Formula 7 and a third unitrepresented by Chemical Formula 8; and an acid generator,

[0029] wherein R₁, R₂ and R₅ are the same or different and selected fromthe group consisting of an alkyl group such as a methyl group and anethyl group, a chlorine atom and an alkyl group including a chlorineatom such as CCl₃; and R₃ is a protecting group released by an acid.

[0030] In the third pattern formation material, since the first unit hasa cyano group, the transmittance against light of a wavelength of a 1 nmthrough 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first, second and third units, a crosslinking reaction isnever caused in the principal chains, resulting in improving thesolubility of an exposed portion of a resist film in a developer.Furthermore, since the first and second units have a benzene ring, thedry etching resistance can be largely improved. In addition, since thethird unit has a carboxyl group, carboxylic acid is generated in theexposed portion of the resist film through irradiation with light.Therefore, the contrast between the exposed portion and an unexposedportion can be improved.

[0031] The fourth pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 9 and asecond unit represented by Chemical Formula 10; and an acid generator,

[0032] wherein R₁ and R₆ are the same or different and selected from thegroup consisting of an alkyl group such as a methyl group and an ethylgroup, a chlorine atom and an alkyl group including a chlorine atom suchas CCl₃; and R₇ is a protecting group released by an acid.

[0033] In the fourth pattern formation material, since the first unithas a cyano group, the transmittance against light of a wavelength of a1 nm through 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first and second units, a crosslinking reaction is nevercaused in the principal chains, resulting in improving the solubility ofan exposed portion of a resist film in a developer. Also, since thefirst unit has a benzene ring, the dry etching resistance can beimproved. Furthermore, when an acid is generated through irradiationwith light and the protecting group is released from the second unit,carboxylic acid is generated in the exposed portion of the resist film.Therefore, the contrast between the exposed portion and an unexposedportion can be improved.

[0034] The fifth pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 11, asecond unit represented by Chemical Formula 12 and a third unitrepresented by Chemical Formula 13; and an acid generator,

[0035] wherein R₁, R₄ and R₆ are the same or different and selected fromthe group consisting of an alkyl group such as a methyl group and anethyl group, a chlorine atom and an alkyl group including a chlorineatom such as CCl₃; and R₇ is a protecting group released by an acid.

[0036] In the fifth pattern formation material, since the first unit hasa cyano group, the transmittance against light of a wavelength of a 1 nmthrough 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first, second and third units, a crosslinking reaction isnever caused in the principal chains, resulting in improving thesolubility of an exposed portion of a resist film in a developer.Furthermore, since the first and second units have a benzene ring, thedry etching resistance can be largely improved, and since the secondunit has a phenyl group, the wettability is improved so as to improveadhesion onto a substrate. Moreover, the dissolving rate in an alkalinedeveloper can be controlled by adjusting the ratio of the second unit inthe polymer. Furthermore, when an acid is generated through irradiationwith light and the protecting group is released from the third unit,carboxylic acid is generated in the exposed portion of the resist film.Therefore, the contrast between the exposed portion and an unexposedportion can be improved.

[0037] The sixth pattern formation material of this invention comprisesa polymer including a first unit represented by Chemical Formula 14, asecond unit represented by Chemical Formula 15 and a third unitrepresented by Chemical Formula 16; and an acid generator,

[0038] wherein R₁, R₅ and R₆ are the same or different and selected fromthe group consisting of an alkyl group such as a methyl group and anethyl group, a chlorine atom and an alkyl group including a chlorineatom such as CCl₃; and R₇ is a protecting group released by an acid.

[0039] In the sixth pattern formation material, since the first unit hasa cyano group, the transmittance against light of a wavelength of a 1 nmthrough 180 nm band can be improved, and since an alkyl group, achlorine atom or an alkyl group including a chlorine atom is substitutedfor a hydrogen atom located at the α-position of the principal chain ofeach of the first, second and third units, a crosslinking reaction isnever caused in the principal chains, resulting in improving thesolubility of an exposed portion of a resist film in a developer. Also,since the first unit has a benzene ring, the dry etching resistance canbe improved. Furthermore, since the second unit has a carboxyl group,carboxylic acid is generated in the exposed portion of the resist filmfrom the second unit through irradiation with light, and when an acid isgenerated through irradiation with light and the protecting group isreleased from the third unit, carboxylic acid is generated. Therefore,the contrast between the exposed portion and an unexposed portion can belargely improved.

[0040] Specific examples of the protecting group released by an acidrepresented by R₃ in the aforementioned formulas are represented byChemical Formula D:

[0041] Specific examples of the protecting group released by an acidrepresented by R₇ in the aforementioned formulas are represented byChemical Formula E:

[0042] The first pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thefirst pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0043] In the first pattern formation method, the first patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of the resist film in a developer canbe improved. Furthermore, the dry etching resistance can be largelyimproved.

[0044] The second pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thesecond pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0045] In the second pattern formation method, the second patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of the resist film in a developer canbe improved. Furthermore, the dry etching resistance can be largelyimproved. In addition, the wettability of the pattern formation materialis improved so as to improve the adhesion onto the substrate, and thedissolving rate in an alkaline developer can be controlled by adjustingthe ratio of the third unit in the polymer.

[0046] The third pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thethird pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0047] In the third pattern formation method, the third patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of the resist film in a developer canbe improved. Furthermore, the dry etching resistance can be largelyimproved. In addition, since carboxylic acid is generated in the exposedportion of the resist film through irradiation with light, the contrastbetween the exposed portion and an unexposed portion can be improved.

[0048] The fourth pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thefourth pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0049] In the fourth pattern formation method, the fourth patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of the resist film in a developer canbe improved. Also, the dry etching resistance can be largely improved.Furthermore, since carboxylic acid is generated in the exposed portionof the resist film through irradiation with light, the contrast betweenthe exposed portion and an unexposed portion can be improved.

[0050] The fifth pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thefifth pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0051] In the fifth pattern formation method, the fifth patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of the resist film in a developer canbe improved. Furthermore, the dry etching resistance can be largelyimproved. In addition, the wettability of the pattern formation materialis improved so as to improve the adhesion onto the substrate, and thedissolving rate in an alkaline developer can be controlled by adjustingthe ratio of the third unit in the polymer. Moreover, since carboxylicacid is generated in the exposed portion of the resist film throughirradiation with light, the contrast between the exposed portion and anunexposed portion can be improved.

[0052] The sixth pattern formation method of this invention comprisesthe steps of forming a resist film by applying, on a substrate, thesixth pattern formation material; irradiating the resist film withexposing light of a wavelength of a 1 nm through 30 nm band or a 110 nmthrough 180 nm band for pattern exposure; and forming a resist patternby developing the resist film after the pattern exposure.

[0053] In the sixth pattern formation method, the sixth patternformation material is used, and hence, the transmittance against lightof a wavelength of a 1 nm through 180 nm band can be improved and thesolubility of an exposed portion of a resist film in a developer can beimproved. Also, the dry etching resistance can be largely improved.Furthermore, since a large amount of carboxylic acid is generated in theexposed portion of the resist film through irradiation with light, thecontrast between the exposed portion and an unexposed portion can belargely improved.

[0054] In any of the first through sixth pattern formation methods, theexposing light is preferably F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.

BRIEF DESCRIPTION OF THE DRAWINGS

[0055]FIGS. 1A, 1B, 1C and 1D are cross-sectional views for showingprocedures in a pattern formation method according to any of Embodiments1 through 6 of the invention; and

[0056]FIGS. 2A, 2B, 2C and 2D are cross-sectional views for showingprocedures in a conventional pattern formation method.

DETAILED DESCRIPTION OF THE INVENTION EMBODIMENT 1

[0057] A pattern formation material and a pattern formation methodaccording to Embodiment 1 of the invention will now be described withreference to FIGS. 1A through 1D.

[0058] In this embodiment, the first pattern formation material and thefirst pattern formation method described above are embodied, and thespecific composition of a resist material of this embodiment is asfollows:

[0059] Base polymer: a polymer represented by Chemical Formula F below

[0060] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0061] Solvent: diglime

[0062] First, as is shown in FIG. 1A, the resist material having theabove-described composition is applied on a semiconductor substrate 10by spin coating, thereby forming a resist film 11 with a thickness of0.2 μm. At this point, since the base polymer is alkali-refractory, theresist film 11 is alkali-refractory.

[0063] Next, as is shown in FIG. 1B, the resist film 11 is subjected topattern exposure by irradiating through a mask 12 with F₂ excimer laser13 (of a wavelength of a 157 nm band). Thus, an acid is generated fromthe acid generator in an exposed portion 11 a of the resist film 11while no acid is generated in an unexposed portion 11 b of the resistfilm 11.

[0064] Then, as is shown in FIG. 1C, the semiconductor substrate 10together with the resist film 11 is heated with a hot plate 14. Thus,the base polymer is heated in the presence of the acid in the exposedportion 11 a of the resist film 11, so as to release a protecting groupof a unit on the right hand side in Chemical Formula 19. As a result,the base polymer becomes alkali-soluble.

[0065] Subsequently, the resist film 11 is developed with an alkalinedeveloper such as a tetramethylammonium hydroxide aqueous solution.Thus, the exposed portion 11 a of the resist film 11 is dissolved in thedeveloper, so that a resist pattern 15 can be formed from the unexposedportion 11 b of the resist film 11 as is shown in FIG. 1D.

EMBODIMENT 2

[0066] A pattern formation material and a pattern formation methodaccording to Embodiment 2 of the invention will now be described.Embodiment 2 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0067] In this embodiment, the second pattern formation material and thesecond pattern formation method described above are embodied, and thespecific composition of the resist material is as follows:

[0068] Base polymer: a polymer represented by Chemical Formula G below

[0069] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0070] Solvent: diglime

EMBODIMENT 3

[0071] A pattern formation material and a pattern formation methodaccording to Embodiment 3 of the invention will now be described.Embodiment 3 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0072] In this embodiment, the third pattern formation material and thethird pattern formation method described above are embodied, and thespecific composition of the resist material is as follows:

[0073] Base polymer: a polymer represented by Chemical Formula H below

[0074] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0075] Solvent: diglime

EMBODIMENT 4

[0076] A pattern formation material and a pattern formation methodaccording to Embodiment 4 of the invention will now be described.Embodiment 4 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0077] In this embodiment, the fourth pattern formation material and thefourth pattern formation method described above are embodied, and thespecific composition of the resist material is as follows:

[0078] Base polymer: a polymer represented by Chemical Formula I below

[0079] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0080] Solvent: diglime

EMBODIMENT 5

[0081] A pattern formation material and a pattern formation methodaccording to Embodiment 5 of the invention will now be described.Embodiment 5 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0082] In this embodiment, the fifth pattern formation material and thefifth pattern formation method described above are embodied, and thespecific composition of the resist material is as follows:

[0083] Base polymer: a polymer represented by Chemical Formula J below

[0084] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0085] Solvent: diglime

EMBODIMENT 6

[0086] A pattern formation material and a pattern formation methodaccording to Embodiment 6 of the invention will now be described.Embodiment 6 is different from Embodiment 1 in the resist materialalone, and hence, the resist material alone will be herein described.

[0087] In this embodiment, the sixth pattern formation material and thesixth pattern formation method described above are embodied, and thespecific composition of the resist material is as follows:

[0088] Base polymer: a polymer represented by Chemical Formula K below

[0089] Acid generator: triphenylsulfonium triflate (1 wt % based on thebase polymer)

[0090] Solvent: diglime

What is claimed is:
 1. A pattern formation material comprising: apolymer including a first unit represented by Chemical Formula 1 and asecond unit represented by Chemical Formula 2; and an acid generator,

wherein R₁ and R₂ are the same or different and selected from the groupconsisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid.
 2. A pattern formation material comprising: a polymer including afirst unit represented by Chemical Formula 3, a second unit representedby Chemical Formula 4 and a third unit represented by Chemical Formula5; and an acid generator,

wherein R₁, R₂ and R₄ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid.
 3. A pattern formation material comprising: a polymer including afirst unit represented by Chemical Formula 6, a second unit representedby Chemical Formula 7 and a third unit represented by Chemical Formula8; and an acid generator,

wherein R₁, R₂ and R₅ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid.
 4. A pattern formation material comprising: a polymer including afirst unit represented by Chemical Formula 9 and a second unitrepresented by Chemical Formula 10; and an acid generator,

wherein R₁ and R₆ are the same or different and selected from the groupconsisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid.
 5. A pattern formation material comprising: a polymer including afirst unit represented by Chemical Formula 11, a second unit representedby Chemical Formula 12 and a third unit represented by Chemical Formula13; and an acid generator,

wherein R₁, R₄ and R₆ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid.
 6. A pattern formation material comprising: a polymer including afirst unit represented by Chemical Formula 14, a second unit representedby Chemical Formula 15 and a third unit represented by Chemical Formula16; and an acid generator,

wherein R₁, R₅ and R₆ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid.
 7. A pattern formation method comprising the steps of: forming aresist film by applying, on a substrate, a pattern formation materialcontaining a polymer including a first unit represented by ChemicalFormula 17 and a second unit represented by Chemical Formula 18, and anacid generator;

wherein R₁ and R₂ are the same or different and selected from the groupconsisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 8. The pattern formation method of claim 7 ,wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.
 9. A pattern formation method comprising the steps of:forming a resist film by applying, on a substrate, a pattern formationmaterial containing a polymer including a first unit represented byChemical Formula 19, a second unit represented by Chemical Formula 20and a third unit represented by Chemical Formula 21, and an acidgenerator;

wherein R₁, R₂ and R₄ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 10. The pattern formation method of claim 9, wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.
 11. A pattern formation method comprising the steps of:forming a resist film by applying, on a substrate, a pattern formationmaterial containing a polymer including a first unit represented byChemical Formula 22, a second unit represented by Chemical Formula 23and a third unit represented by Chemical Formula 24, and an acidgenerator;

wherein R₁, R₂ and R₅ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₃ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 12. The pattern formation method of claim 11, wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.
 13. A pattern formation method comprising the steps of:forming a resist film by applying, on a substrate, a pattern formationmaterial containing a polymer including a first unit represented byChemical Formula 25 and a second unit represented by Chemical Formula26, and an acid generator;

wherein R₁ and R₆ are the same or different and selected from the groupconsisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 14. The pattern formation method of claim 13, wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.
 15. A pattern formation method comprising the steps of:forming a resist film by applying, on a substrate, a pattern formationmaterial containing a polymer including a first unit represented byChemical Formula 27, a second unit represented by Chemical Formula 28and a third unit represented by Chemical Formula 29, and an acidgenerator;

wherein R₁, R₄ and R₆ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 16. The pattern formation method of claim 15, wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.
 17. A pattern formation method comprising the steps of:forming a resist film by applying, on a substrate, a pattern formationmaterial containing a polymer including a first unit represented byChemical Formula 30, a second unit represented by Chemical Formula 31and a third unit represented by Chemical Formula 32, and an acidgenerator;

wherein R₁, R₅ and R₆ are the same or different and selected from thegroup consisting of an alkyl group, a chlorine atom and an alkyl groupincluding a chlorine atom; and R₇ is a protecting group released by anacid; irradiating said resist film with exposing light of a wavelengthof a 1 nm through 30 nm band or a 110 nm through 180 nm band for patternexposure; and forming a resist pattern by developing said resist filmafter the pattern exposure.
 18. The pattern formation method of claim 17, wherein said exposing light is F₂ excimer laser, Ar₂ excimer laser orsoft-X rays.